TY - JOUR
T1 - Effect of Fe impurities on the generation of process-induced microdefects in Czochralski silicon crystals
AU - Jablonski, Jaroslaw
AU - Saito, Mina
AU - Miyamura, Yoshiji
AU - Imai, Masato
PY - 1996/2
Y1 - 1996/2
N2 - The enhancement effect of Fe impurities on the generation of surface and bulk microdefects, such as oxidation-induced stacking faults, oxide precipitates, precipitate-dislocation complexes and bulk stacking faults, has been observed in annealed silicon wafers prepared from Czochralski grown crystals intentionally contaminated with iron. The effect remains significant even for an Fe concentration as low as 1012 atoms/cm3. It has been found that Fe facilitates the nucleation of oxide precipitates in silicon. The mechanism of Fe-assisted nucleation of oxide precipitates is discussed. The effect of Fe on the generation of oxidation-induced stacking faults is explained, assuming that both oxide precipitates and Fe:Si precipitates formed near the wafer surface serve as active nucleation sites of these microdefects.
AB - The enhancement effect of Fe impurities on the generation of surface and bulk microdefects, such as oxidation-induced stacking faults, oxide precipitates, precipitate-dislocation complexes and bulk stacking faults, has been observed in annealed silicon wafers prepared from Czochralski grown crystals intentionally contaminated with iron. The effect remains significant even for an Fe concentration as low as 1012 atoms/cm3. It has been found that Fe facilitates the nucleation of oxide precipitates in silicon. The mechanism of Fe-assisted nucleation of oxide precipitates is discussed. The effect of Fe on the generation of oxidation-induced stacking faults is explained, assuming that both oxide precipitates and Fe:Si precipitates formed near the wafer surface serve as active nucleation sites of these microdefects.
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U2 - 10.1143/jjap.35.520
DO - 10.1143/jjap.35.520
M3 - Article
AN - SCOPUS:0030082259
SN - 0021-4922
VL - 35
SP - 520
EP - 525
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2 PART A
ER -