Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth

Shin ichi Nishizawa, Tomohisa Kato, Kazuo Arai

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

Numerical simulation was applied to observe the phenomena inside a crucible in silicon carbide (SiC) sublimation growth. Numerical simulation results show that crystal quality as well as crystal shape strongly depends on the temperature distribution inside the crucible. Numerical simulation also suggested that it is important to reduce the residual stress in the crystal in order to avoid the generation of dislocations. From these results, SiC sublimation growth was controlled actively, and large and high quality SiC single crystal was grown.

本文言語英語
ページ(範囲)342-344
ページ数3
ジャーナルJournal of Crystal Growth
303
1 SPEC. ISS.
DOI
出版ステータス出版済み - 5 1 2007
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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