抄録
We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Materials Science and Chemical Engineering |
| ページ | 383-386 |
| ページ数 | 4 |
| DOI | |
| 出版物ステータス | 出版済み - 7 8 2013 |
| イベント | 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 - , シンガポール 継続期間: 2 20 2013 → 2 21 2013 |
出版物シリーズ
| 名前 | Advanced Materials Research |
|---|---|
| 巻 | 699 |
| ISSN（印刷物） | 1022-6680 |
その他
| その他 | 2013 International Conference on Materials Science and Chemical Engineering, MSCE 2013 |
|---|---|
| 国 | シンガポール |
| 期間 | 2/20/13 → 2/21/13 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
これを引用
Effect of high repetition pulsed laser annealing on optical properties of phosphorus ion-implanted ZnO nanorods. / Shimogaki, Tetsuya; Ofuji, Taihei; Tetsuyama, Norihiro; Okazaki, Kota; Higashihata, Mitsuhiro; Nakamura, Daisuke; Ikenoue, Hiroshi; Asano, Tanemasa; Okada, Tatsuo.
Materials Science and Chemical Engineering. 2013. p. 383-386 (Advanced Materials Research; 巻 699).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
}
TY - GEN
T1 - Effect of high repetition pulsed laser annealing on optical properties of phosphorus ion-implanted ZnO nanorods
AU - Shimogaki, Tetsuya
AU - Ofuji, Taihei
AU - Tetsuyama, Norihiro
AU - Okazaki, Kota
AU - Higashihata, Mitsuhiro
AU - Nakamura, Daisuke
AU - Ikenoue, Hiroshi
AU - Asano, Tanemasa
AU - Okada, Tatsuo
PY - 2013/7/8
Y1 - 2013/7/8
N2 - We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.
AB - We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=84879644813&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879644813&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.699.383
DO - 10.4028/www.scientific.net/AMR.699.383
M3 - Conference contribution
SN - 9783037856758
T3 - Advanced Materials Research
SP - 383
EP - 386
BT - Materials Science and Chemical Engineering
ER -