Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ken Ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu Qiang Shen, Philippe Riblet, Peter Ramvall, Yoshinobu Aoyagi

研究成果: ジャーナルへの寄稿記事

30 引用 (Scopus)

抄録

We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

元の言語英語
ページ(範囲)2879-2881
ページ数3
ジャーナルApplied Physics Letters
75
発行部数19
DOI
出版物ステータス出版済み - 11 8 1999
外部発表Yes

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indium
optical properties
stimulated emission
spontaneous emission
excitation
molecular beam epitaxy
retarding
photoluminescence
life (durability)
thresholds
kinetics
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Kumano, H., Hoshi, K. I., Tanaka, S., Suemune, I., Shen, X. Q., Riblet, P., ... Aoyagi, Y. (1999). Effect of indium doping on the transient optical properties of GaN films. Applied Physics Letters, 75(19), 2879-2881. https://doi.org/10.1063/1.125178

Effect of indium doping on the transient optical properties of GaN films. / Kumano, Hidekazu; Hoshi, Ken Ichi; Tanaka, Satoru; Suemune, Ikuo; Shen, Xu Qiang; Riblet, Philippe; Ramvall, Peter; Aoyagi, Yoshinobu.

:: Applied Physics Letters, 巻 75, 番号 19, 08.11.1999, p. 2879-2881.

研究成果: ジャーナルへの寄稿記事

Kumano, H, Hoshi, KI, Tanaka, S, Suemune, I, Shen, XQ, Riblet, P, Ramvall, P & Aoyagi, Y 1999, 'Effect of indium doping on the transient optical properties of GaN films', Applied Physics Letters, 巻. 75, 番号 19, pp. 2879-2881. https://doi.org/10.1063/1.125178
Kumano H, Hoshi KI, Tanaka S, Suemune I, Shen XQ, Riblet P その他. Effect of indium doping on the transient optical properties of GaN films. Applied Physics Letters. 1999 11 8;75(19):2879-2881. https://doi.org/10.1063/1.125178
Kumano, Hidekazu ; Hoshi, Ken Ichi ; Tanaka, Satoru ; Suemune, Ikuo ; Shen, Xu Qiang ; Riblet, Philippe ; Ramvall, Peter ; Aoyagi, Yoshinobu. / Effect of indium doping on the transient optical properties of GaN films. :: Applied Physics Letters. 1999 ; 巻 75, 番号 19. pp. 2879-2881.
@article{6481df4b40e9446295e287ca22043277,
title = "Effect of indium doping on the transient optical properties of GaN films",
abstract = "We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.",
author = "Hidekazu Kumano and Hoshi, {Ken Ichi} and Satoru Tanaka and Ikuo Suemune and Shen, {Xu Qiang} and Philippe Riblet and Peter Ramvall and Yoshinobu Aoyagi",
year = "1999",
month = "11",
day = "8",
doi = "10.1063/1.125178",
language = "English",
volume = "75",
pages = "2879--2881",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Effect of indium doping on the transient optical properties of GaN films

AU - Kumano, Hidekazu

AU - Hoshi, Ken Ichi

AU - Tanaka, Satoru

AU - Suemune, Ikuo

AU - Shen, Xu Qiang

AU - Riblet, Philippe

AU - Ramvall, Peter

AU - Aoyagi, Yoshinobu

PY - 1999/11/8

Y1 - 1999/11/8

N2 - We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

AB - We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

UR - http://www.scopus.com/inward/record.url?scp=0001384427&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001384427&partnerID=8YFLogxK

U2 - 10.1063/1.125178

DO - 10.1063/1.125178

M3 - Article

AN - SCOPUS:0001384427

VL - 75

SP - 2879

EP - 2881

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -