Effect of indium doping on the transient optical properties of GaN films

Hidekazu Kumano, Ken Ichi Hoshi, Satoru Tanaka, Ikuo Suemune, Xu Qiang Shen, Philippe Riblet, Peter Ramvall, Yoshinobu Aoyagi

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

We have investigated the effects of In doping on the optical properties of GaN films grown by gas-source molecular-beam epitaxy. Time-resolved photoluminescence was carried out to study the transient optical properties of the epitaxial films. In comparison to the undoped GaN film, the spontaneous emission lifetime was prolonged from below 20 to 70 ps by doping with In. Under high-excitation density, stimulated emission was observed from both samples. The threshold excitation density was found to be reduced in the In-doped sample. These significant improvements of the optical properties are attributed to the effective suppression of the formation of the nonradiative recombination centers caused by a change of the growth kinetics induced by a small amount of In supplied during growth of the GaN films.

本文言語英語
ページ(範囲)2879-2881
ページ数3
ジャーナルApplied Physics Letters
75
19
DOI
出版ステータス出版済み - 11 8 1999
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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