Effect of laser annealing on photoluminescence properties of Phosphorus implanted ZnO nanorods

Tetsuya Shimogaki, Kota Okazaki, Daisuke Nakamura, Mitsuhiro Higashihata, Tanemasa Asano, Tatsuo Okada

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

抜粋

The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

元の言語英語
ページ(範囲)15247-15252
ページ数6
ジャーナルOptics Express
20
発行部数14
DOI
出版物ステータス出版済み - 7 2 2012

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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