Effect of low-energy ion impact on the structure of hexagonal boron nitride films studied in surface-wave plasma

M. Torigoe, Y. Kamimura, Kungen Tsutsui, S. Matsumoto

研究成果: ジャーナルへの寄稿記事

抄録

A high-density surface-wave plasma source is used to deposit hexagonal boron nitride (hBN) films in a gas mixture of He, H2, N2, Ar, and BF3 under a high ion flux condition using low-energy ion irradiation. The ion energy is controlled between around zero and 100 eV by applying a negative or positive bias voltage to a substrate, while the ion flux is increased by locating a substrate upstream in the diffusive plasma. For ion energies above ∼37 eV, the structure of the films depends upon ion energy more than substrate temperature, typical of subplantation processes. As a result, the structural order and crystallinity of sp2-bonded phase in the films characterized by Fourier transform infrared spectroscopy and X-ray diffraction are increased with decreasing ion energy, while the mass density of the films characterized by X-ray reflectivity is retained relatively high with a slight dependence upon ion energy.

元の言語英語
ページ(範囲)126-130
ページ数5
ジャーナルSurface and Interface Analysis
51
発行部数1
DOI
出版物ステータス出版済み - 1 1 2019

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ion impact
Boron nitride
boron nitrides
Surface waves
surface waves
Ions
Plasmas
ions
energy
Substrates
Fluxes
Plasma sources
Ion bombardment
Bias voltage
boron nitride
ion irradiation
Gas mixtures
upstream
Fourier transform infrared spectroscopy
gas mixtures

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

これを引用

Effect of low-energy ion impact on the structure of hexagonal boron nitride films studied in surface-wave plasma. / Torigoe, M.; Kamimura, Y.; Tsutsui, Kungen; Matsumoto, S.

:: Surface and Interface Analysis, 巻 51, 番号 1, 01.01.2019, p. 126-130.

研究成果: ジャーナルへの寄稿記事

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