Effect of Low Temperature Annealing on pn Junction Formation using Si Paste

Huan Zhu, Yusuke Kuboki, Morihiro Sakamoto, Yoshimine Kato

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Low temperature aluminum-induced crystallization (AIC) was successfully introduced to make a Si paste pn junction device. The Si paste was fabricated by using a planetary ball miller from Si source materials. Oxidation of Si paste was suppressed by low temperature AIC at 400°C. The ideality factor of 4.3 with a rectification ratio of 3200 was obtained. Si paste can be a novel technology candidate to lower the cost of Si devices such as solar cells.

本文言語英語
ホスト出版物のタイトル2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728181769
DOI
出版ステータス出版済み - 4 8 2021
イベント5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 - Chengdu, 中国
継続期間: 4 8 20214 11 2021

出版物シリーズ

名前2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021

会議

会議5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
国/地域中国
CityChengdu
Period4/8/214/11/21

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 産業および生産工学
  • 電子材料、光学材料、および磁性材料

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