Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

T. Maekura, K. Tanaka, C. Motoyama, R. Yoneda, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.

元の言語英語
記事番号104001
ジャーナルSemiconductor Science and Technology
32
発行部数10
DOI
出版物ステータス出版済み - 8 30 2017

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Electroluminescence
electroluminescence
Diodes
Energy gap
Metals
diodes
Doping (additives)
metals
Electron tunneling
Substrates
electron tunneling
p-n junctions
injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes. / Maekura, T.; Tanaka, K.; Motoyama, C.; Yoneda, R.; Yamamoto, Keisuke; Nakashima, Hiroshi; Wang, Dong.

:: Semiconductor Science and Technology, 巻 32, 番号 10, 104001, 30.08.2017.

研究成果: ジャーナルへの寄稿記事

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abstract = "The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.",
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AU - Maekura, T.

AU - Tanaka, K.

AU - Motoyama, C.

AU - Yoneda, R.

AU - Yamamoto, Keisuke

AU - Nakashima, Hiroshi

AU - Wang, Dong

PY - 2017/8/30

Y1 - 2017/8/30

N2 - The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.

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