Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications

M. Abd Elnaby, A. Ikeda, Reiji Hattori, Y. Kuroki

研究成果: 著書/レポートタイプへの貢献会議での発言

2 引用 (Scopus)

抄録

Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

元の言語英語
ホスト出版物のタイトルICM 2000 - Proceedings of the 12th International Conference on Microelectronics
出版者Institute of Electrical and Electronics Engineers Inc.
ページ251-256
ページ数6
2000-October
ISBN(電子版)9643600572
DOI
出版物ステータス出版済み - 10 31 2000
イベント12th International Conference on Microelectronics, ICM 2000 - Tehran, イラン・イスラム共和国
継続期間: 10 31 200011 2 2000

その他

その他12th International Conference on Microelectronics, ICM 2000
イラン・イスラム共和国
Tehran
期間10/31/0011/2/00

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Nitrogen plasma
Flash memory
Electric properties
Thin films
Silicon
Charge trapping
Oxides
Interface states
Global warming
Leakage currents
Spectroscopy
Nitrogen
Plasmas
Oxidation
Ions
Substrates
Gases

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Abd Elnaby, M., Ikeda, A., Hattori, R., & Kuroki, Y. (2000). Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. : ICM 2000 - Proceedings of the 12th International Conference on Microelectronics (巻 2000-October, pp. 251-256). [916455] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICM.2000.916455

Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. / Abd Elnaby, M.; Ikeda, A.; Hattori, Reiji; Kuroki, Y.

ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. 巻 2000-October Institute of Electrical and Electronics Engineers Inc., 2000. p. 251-256 916455.

研究成果: 著書/レポートタイプへの貢献会議での発言

Abd Elnaby, M, Ikeda, A, Hattori, R & Kuroki, Y 2000, Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. : ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. 巻. 2000-October, 916455, Institute of Electrical and Electronics Engineers Inc., pp. 251-256, 12th International Conference on Microelectronics, ICM 2000, Tehran, イラン・イスラム共和国, 10/31/00. https://doi.org/10.1109/ICM.2000.916455
Abd Elnaby M, Ikeda A, Hattori R, Kuroki Y. Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. : ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. 巻 2000-October. Institute of Electrical and Electronics Engineers Inc. 2000. p. 251-256. 916455 https://doi.org/10.1109/ICM.2000.916455
Abd Elnaby, M. ; Ikeda, A. ; Hattori, Reiji ; Kuroki, Y. / Effect of nitrogen plasma conditions on the electrical properties of silicon oxynitrided thin films for flash memory applications. ICM 2000 - Proceedings of the 12th International Conference on Microelectronics. 巻 2000-October Institute of Electrical and Electronics Engineers Inc., 2000. pp. 251-256
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N2 - Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

AB - Si[100] substrates were oxynitrided with nitrogen plasma, at different exposure times, followed by thermal oxidation in dry O2 without using any harmful or global warming gas. Secondary ion mass spectroscopy (SIMS) measurements confirm that nitrogen is confined to the immediate vicinity of the surface. The damage induced in the thin SiO2-Si system after an exposure to nitrogen plasma at different exposure times ranged from 10 to 60 s was estimated from the analysis of C-V and I-V measurements. A generation of different densities of positive oxide charge has been observed. Correlation between the local bonding structures in the oxynitride films and the electrically active defective states at the Si-SiO2 interface are also discussed. It is proposed that improved electrical characteristics for positive charge trapping, interface state density, leakage current, and stress immunity of the oxynitride films could be obtained by using an optimal plasma exposure time of about 30 s. The preliminary results obtained indicate that these oxynitride films can be considered as potential candidates for ultra thin gate oxide and flash memory applications.

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