Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide

T. Otobe, T. Hayashi, M. Nishikino

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We calculate the electron excitation in cubic silicon carbide caused by the intense femtosecond laser double pulses using the time-dependent density functional theory (TDDFT). After the first pulse ends, excited electrons should be relaxed by collisional processes. Because TDDFT does not include scattering processes, thermalization is mimicked by following three assumptions. First, we assume no collisions and relaxation processes. Second, we assume the partially thermalized electronic state defined by two quasieratures in the conduction and valence bands individually. Third, we assume the thermalized electron distribution, which is expressed by single electron temperature. Our results indicate that the plasma frequency (ωpl) formed by the first pulse is the key parameter in energy absorption in the second pulse. When the plasma frequency of the plasma formed by the first laser approaches the frequency of the laser, resonant excitation by the second pulse occurs. The lower electron temperature shows higher ωpl and higher efficient energy absorption because the effective mass of the electron becomes smaller.

元の言語英語
記事番号171107
ジャーナルApplied Physics Letters
111
発行部数17
DOI
出版物ステータス出版済み - 10 23 2017

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silicon carbides
pulses
excitation
lasers
energy absorption
plasma frequencies
electron energy
density functional theory
electrons
electron distribution
conduction bands
valence
collisions
scattering
electronics

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide. / Otobe, T.; Hayashi, T.; Nishikino, M.

:: Applied Physics Letters, 巻 111, 番号 17, 171107, 23.10.2017.

研究成果: ジャーナルへの寄稿記事

@article{5db4cae65fc7465f9cdbe06b662e96ce,
title = "Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide",
abstract = "We calculate the electron excitation in cubic silicon carbide caused by the intense femtosecond laser double pulses using the time-dependent density functional theory (TDDFT). After the first pulse ends, excited electrons should be relaxed by collisional processes. Because TDDFT does not include scattering processes, thermalization is mimicked by following three assumptions. First, we assume no collisions and relaxation processes. Second, we assume the partially thermalized electronic state defined by two quasieratures in the conduction and valence bands individually. Third, we assume the thermalized electron distribution, which is expressed by single electron temperature. Our results indicate that the plasma frequency (ωpl) formed by the first pulse is the key parameter in energy absorption in the second pulse. When the plasma frequency of the plasma formed by the first laser approaches the frequency of the laser, resonant excitation by the second pulse occurs. The lower electron temperature shows higher ωpl and higher efficient energy absorption because the effective mass of the electron becomes smaller.",
author = "T. Otobe and T. Hayashi and M. Nishikino",
year = "2017",
month = "10",
day = "23",
doi = "10.1063/1.4997363",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Effect of plasma formation on the double pulse laser excitation of cubic silicon carbide

AU - Otobe, T.

AU - Hayashi, T.

AU - Nishikino, M.

PY - 2017/10/23

Y1 - 2017/10/23

N2 - We calculate the electron excitation in cubic silicon carbide caused by the intense femtosecond laser double pulses using the time-dependent density functional theory (TDDFT). After the first pulse ends, excited electrons should be relaxed by collisional processes. Because TDDFT does not include scattering processes, thermalization is mimicked by following three assumptions. First, we assume no collisions and relaxation processes. Second, we assume the partially thermalized electronic state defined by two quasieratures in the conduction and valence bands individually. Third, we assume the thermalized electron distribution, which is expressed by single electron temperature. Our results indicate that the plasma frequency (ωpl) formed by the first pulse is the key parameter in energy absorption in the second pulse. When the plasma frequency of the plasma formed by the first laser approaches the frequency of the laser, resonant excitation by the second pulse occurs. The lower electron temperature shows higher ωpl and higher efficient energy absorption because the effective mass of the electron becomes smaller.

AB - We calculate the electron excitation in cubic silicon carbide caused by the intense femtosecond laser double pulses using the time-dependent density functional theory (TDDFT). After the first pulse ends, excited electrons should be relaxed by collisional processes. Because TDDFT does not include scattering processes, thermalization is mimicked by following three assumptions. First, we assume no collisions and relaxation processes. Second, we assume the partially thermalized electronic state defined by two quasieratures in the conduction and valence bands individually. Third, we assume the thermalized electron distribution, which is expressed by single electron temperature. Our results indicate that the plasma frequency (ωpl) formed by the first pulse is the key parameter in energy absorption in the second pulse. When the plasma frequency of the plasma formed by the first laser approaches the frequency of the laser, resonant excitation by the second pulse occurs. The lower electron temperature shows higher ωpl and higher efficient energy absorption because the effective mass of the electron becomes smaller.

UR - http://www.scopus.com/inward/record.url?scp=85032624186&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032624186&partnerID=8YFLogxK

U2 - 10.1063/1.4997363

DO - 10.1063/1.4997363

M3 - Article

AN - SCOPUS:85032624186

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171107

ER -