Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kenji Kasahara, Hidenori Higashi, Mario Nakano, Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima, Kohei Hamaya

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.

本文言語英語
ページ(範囲)68-72
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版ステータス出版済み - 11 1 2017

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル