Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates

Kenji Kasahara, Hidenori Higashi, Mario Nakano, Yuta Nagatomi, Keisuke Yamamoto, Hiroshi Nakashima, Kohei Hamaya

研究成果: ジャーナルへの寄稿記事

4 引用 (Scopus)

抄録

We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.

元の言語英語
ページ(範囲)68-72
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版物ステータス出版済み - 11 1 2017

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Germanium
Hole mobility
hole mobility
germanium
Electric properties
electrical properties
Annealing
Crystalline materials
Glass
Hall mobility
annealing
glass
Growth temperature
Substrates
Thin film transistors
Crystallization
transistors
crystallization
atmospheres
thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates. / Kasahara, Kenji; Higashi, Hidenori; Nakano, Mario; Nagatomi, Yuta; Yamamoto, Keisuke; Nakashima, Hiroshi; Hamaya, Kohei.

:: Materials Science in Semiconductor Processing, 巻 70, 01.11.2017, p. 68-72.

研究成果: ジャーナルへの寄稿記事

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AU - Kasahara, Kenji

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AU - Nakano, Mario

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AU - Yamamoto, Keisuke

AU - Nakashima, Hiroshi

AU - Hamaya, Kohei

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AB - We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.

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