抄録
We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 68-72 |
| ページ数 | 5 |
| ジャーナル | Materials Science in Semiconductor Processing |
| 巻 | 70 |
| DOI | |
| 出版物ステータス | 出版済み - 11 1 2017 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates. / Kasahara, Kenji; Higashi, Hidenori; Nakano, Mario; Nagatomi, Yuta; Yamamoto, Keisuke; Nakashima, Hiroshi; Hamaya, Kohei.
：: Materials Science in Semiconductor Processing, 巻 70, 01.11.2017, p. 68-72.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Effect of post annealing on hole mobility of pseudo-single-crystalline germanium films on glass substrates
AU - Kasahara, Kenji
AU - Higashi, Hidenori
AU - Nakano, Mario
AU - Nagatomi, Yuta
AU - Yamamoto, Keisuke
AU - Nakashima, Hiroshi
AU - Hamaya, Kohei
PY - 2017/11/1
Y1 - 2017/11/1
N2 - We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.
AB - We examine electrical properties of pseudo-single-crystalline (PSC) Ge films, formed by modulated Au-induced-crystallization (GIC) method, on glass substrates. Although higher growth temperatures and thicker Au layers in GIC conditions degrade the Hall mobility of holes, the influence of the Au deep centers can be ignored. For the thin film transistors, we find that post annealing in N2 atmosphere enables us to enhance field-effect mobility and the on-off ratios. We discuss the mechanism of the improvement of electrical properties of the PSC-Ge films on the glass substrate.
UR - http://www.scopus.com/inward/record.url?scp=84992756777&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992756777&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2016.07.004
DO - 10.1016/j.mssp.2016.07.004
M3 - Article
AN - SCOPUS:84992756777
VL - 70
SP - 68
EP - 72
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -