Effect of radiation in solid during SiC sublimation growth

Shin Ichi Nishizawa, Shin Ichi Nakashima, Tomohisa Kato

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

The effect of infrared absorption on SiC sublimation growth was numerically investigated. At first, absorption coefficient was estimated as function of doping concentration. Then temperature distribution inside a crucible was numerically analyzed with taking account of absorption in growing crystal. It was pointed out that temperature distribution in a growing crystal strongly depends on absorption coefficient, i.e. doping concentration. As increasing the absorption coefficient, the growth front temperature and temperature gradient inside a growing crystal increase. It might cause large thermal stress and affect the grown crystal quality. This agrees well with growth features in experiment. The growth condition should be determined with taking account of absorption coefficient, i.e. doping concentration.

本文言語英語
ホスト出版物のタイトルSilicon Carbide 2006 - Materials, Processing and Devices
出版社Materials Research Society
ページ29-34
ページ数6
ISBN(印刷版)1558998721, 9781558998728
DOI
出版ステータス出版済み - 2006
外部発表はい
イベント2006 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4 18 20064 20 2006

出版物シリーズ

名前Materials Research Society Symposium Proceedings
911
ISSN(印刷版)0272-9172

その他

その他2006 MRS Spring Meeting
Country米国
CitySan Francisco, CA
Period4/18/064/20/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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