Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks

Xiuyan Li; Takeaki Yajima; Tomonori Nishimura; Kosuke Nagashio; Akira Toriumi

doi:10.1063/1.4901172

Effect of Si substrate on interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

15 被引用数 (Scopus)

抄録

The scavenging kinetics of an ultra-thin SiO₂ interface layer (SiO₂-IL) in an HfO₂/SiO₂/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. ¹⁸O tracing experiments demonstrate that the O-atom moves from the SiO₂-IL to the HfO₂ layer during scavenging. SiO₂-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (V_O) transferred from the HfO₂ reacts with the SiO₂, which is in contact with the Si-substrate, is proposed for the SiO₂-IL scavenging.

本文言語	英語
論文番号	182902
ジャーナル	Applied Physics Letters
巻	105
号	18
DOI	https://doi.org/10.1063/1.4901172
出版ステータス	出版済み - 11月 3 2014
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

文献へのアクセス

10.1063/1.4901172

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引用スタイル

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title = "Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks",

abstract = "The scavenging kinetics of an ultra-thin SiO2 interface layer (SiO2-IL) in an HfO2/SiO2/Si stack is discussed by focusing on the substrate effect in addition to oxygen diffusion. 18O tracing experiments demonstrate that the O-atom moves from the SiO2-IL to the HfO2 layer during scavenging. SiO2-IL scavenging with various substrates (Si, SiC, and sapphire) has been found to be significantly different, which suggests that the Si in the substrate is also necessary to continuously cause the scavenging. Based on these findings and thermodynamic considerations, a kinetic model where oxygen vacancy (VO) transferred from the HfO2 reacts with the SiO2, which is in contact with the Si-substrate, is proposed for the SiO2-IL scavenging.",

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AU - Li, Xiuyan

AU - Yajima, Takeaki

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AU - Nagashio, Kosuke

AU - Toriumi, Akira

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