Effect of sintering aids boron and carbon on high temperature deformation behaviour of β-silicon carbide

Kouichi Kawahara, Sadahiro Tsurekawa, Hideharu Nakashima

研究成果: ジャーナルへの寄稿学術誌査読

10 被引用数 (Scopus)

抄録

In order to clarify the effects of sintering aids (B+C) on high temperature deformation behaviour of β-SiC, HIPed Η-SiC without sintering aids and pressureless sintered Η-SiC with B and C addition were subjected to compression tests at temperatures from 2170 to 2270 K and at strain rates from 6 × 10-6 to 2 × 10-5 s-1. In addition, dislocation structure developed during deformation was analyzed by transmission electron microscopy (TEM). It was found that the flow stress of β-SiC without sintering aids was ca. twice as much as that of the B+C added one. The appearance of the stress-strain curves was noticeably different between them: while the steady state was observed on the stress-strain curves for β-SiC without additives, the flow stress oscillation was observed, followed by yield drop for B+C added ones. TEM observations revealed that dislocations in B+C added β-SiC were dissociated into the Shockley partial dislocations with much larger width than dislocations in β-SiC without additives. This observation suggested that the addition of B+C would probably reduce the stacking fault energy. The observed differences in deformation behaviour will be discussed from the viewpoints of differences in the magnitude of the stacking fault energy and in the mobility of two partial dislocations.

本文言語英語
ページ(範囲)246-254
ページ数9
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
62
3
DOI
出版ステータス出版済み - 1998

!!!All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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