Effect of stress on activation during the formation of np junction in co-implanted germanium

Nur Nadhirah Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Suwa Akira, Hiroshi Ikenoue, Fang Xie, Anthony Centeno

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

Higher carrier mobility in germanium has made germanium as a favorable candidate to replace silicon as a device substrate for a high-performance device. Further optimization on fabrication process parameters in germanium involving ion-implantation and thermal annealing is important to form a highly activated np junction. Co-implantation technique has prompted interest due to its reported stress-induced activation; which may be due to the implementation of two atoms different in size. Combining with ultra-fast/high temperature of laser thermal annealing may promotes the improvement in activation and damage removal. This works focused on introducing stress to the germanium substrate through co-implantation of dopant ions, follows by laser thermal annealing to activate and remove the implanted damages. It is found that Raman shift of the annealed co-implanted sample can be observed with 0.2% increase in the strain value, when comparing to the single implanted sample. 12% improvement of sheet resistance can also be observed, which may be related due to the increase in stress.

本文言語英語
ホスト出版物のタイトル2018 18th International Workshop on Junction Technology, IWJT 2018
編集者Guo-Ping Ru, Bing-Zong Li, Yu-Long Jiang, Xin-Ping Qu
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1-3
ページ数3
ISBN(電子版)9781538645116
DOI
出版ステータス出版済み - 4月 2 2018
イベント18th International Workshop on Junction Technology, IWJT 2018 - Shanghai, 中国
継続期間: 3月 8 20183月 9 2018

出版物シリーズ

名前2018 18th International Workshop on Junction Technology, IWJT 2018
2018-January

その他

その他18th International Workshop on Junction Technology, IWJT 2018
国/地域中国
CityShanghai
Period3/8/183/9/18

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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