Effect of Subthreshold Slope on Sensitivity of MOS-HEMT Square Law Detector for THz Waves

Hiromu Kojima, Daishi Kido, Haruichi Kanaya, Hiroyuki Ishii, Tatsuro Maeda, Mutsuo Ogura, Tanemasa Asano

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Effects of the subthreshold slope of transistor switching on the sensitivity of the square law detector composed of a high electron mobility transistor (HEMT) to detect terahertz waves have been investigated. Theoretical analysis starting from the unified charge control model of channel carriers has been carried out, which comes down to mathematical formulae suggesting that the subthreshold slope significantly affects the output voltage and the sensitivity of the square law detector. Square law detectors have been fabricated using HEMT with a MOS structured gate on glass substrate to detect 1.0 THz waves. HEMT was composed of InGaAs/InAs/InGaAs double hetero-structured channel. Detection tests using the MOS-HEMT square law detector have clearly shown that the output voltage increases with the subthreshold slope.

本文言語英語
ホスト出版物のタイトルProceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1049-1052
ページ数4
ISBN(電子版)9781538654576
DOI
出版ステータス出版済み - 2 22 2019
イベント2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, 大韓民国
継続期間: 10 28 201810 31 2018

出版物シリーズ

名前IEEE Region 10 Annual International Conference, Proceedings/TENCON
2018-October
ISSN(印刷版)2159-3442
ISSN(電子版)2159-3450

会議

会議2018 IEEE Region 10 Conference, TENCON 2018
国/地域大韓民国
CityJeju
Period10/28/1810/31/18

All Science Journal Classification (ASJC) codes

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

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