Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2

Yasuyoshi Kurokawa, Shinya Kato, Yuya Watanabe, Akira Yamada, Makoto Konagai, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: 会議への寄与タイプポスター

抄録

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

元の言語英語
ページ145-150
ページ数6
DOI
出版物ステータス出版済み - 12 28 2012
外部発表Yes
イベント2012 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4 9 20124 13 2012

その他

その他2012 MRS Spring Meeting
米国
San Francisco, CA
期間4/9/124/13/12

Fingerprint

Silicon
Solar cells
solar cells
Nanowires
nanowires
silicon
Amorphous silicon
amorphous silicon
Silicon oxides
Open circuit voltage
sunlight
open circuit voltage
silicon oxides
simulators
Energy gap
Simulators

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kurokawa, Y., Kato, S., Watanabe, Y., Yamada, A., Konagai, M., Ohta, Y., ... Hirota, M. (2012). Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2. 145-150. ポスターセッション発表場所 2012 MRS Spring Meeting, San Francisco, CA, 米国. https://doi.org/10.1557/opl.2012.1154

Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2. / Kurokawa, Yasuyoshi; Kato, Shinya; Watanabe, Yuya; Yamada, Akira; Konagai, Makoto; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

2012. 145-150 ポスターセッション発表場所 2012 MRS Spring Meeting, San Francisco, CA, 米国.

研究成果: 会議への寄与タイプポスター

Kurokawa, Y, Kato, S, Watanabe, Y, Yamada, A, Konagai, M, Ohta, Y, Niwa, Y & Hirota, M 2012, 'Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2' 2012 MRS Spring Meeting, San Francisco, CA, 米国, 4/9/12 - 4/13/12, pp. 145-150. https://doi.org/10.1557/opl.2012.1154
Kurokawa Y, Kato S, Watanabe Y, Yamada A, Konagai M, Ohta Y その他. Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2. 2012. ポスターセッション発表場所 2012 MRS Spring Meeting, San Francisco, CA, 米国. https://doi.org/10.1557/opl.2012.1154
Kurokawa, Yasuyoshi ; Kato, Shinya ; Watanabe, Yuya ; Yamada, Akira ; Konagai, Makoto ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2. ポスターセッション発表場所 2012 MRS Spring Meeting, San Francisco, CA, 米国.6 p.
@conference{ee78ed69a8434c3884b70829b7a0c5d0,
title = "Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2",
abstract = "The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.",
author = "Yasuyoshi Kurokawa and Shinya Kato and Yuya Watanabe and Akira Yamada and Makoto Konagai and Yoshimi Ohta and Yusuke Niwa and masaki Hirota",
year = "2012",
month = "12",
day = "28",
doi = "10.1557/opl.2012.1154",
language = "English",
pages = "145--150",
note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

}

TY - CONF

T1 - Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2

AU - Kurokawa, Yasuyoshi

AU - Kato, Shinya

AU - Watanabe, Yuya

AU - Yamada, Akira

AU - Konagai, Makoto

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2012/12/28

Y1 - 2012/12/28

N2 - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

AB - The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

UR - http://www.scopus.com/inward/record.url?scp=84871510351&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871510351&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1154

DO - 10.1557/opl.2012.1154

M3 - Poster

SP - 145

EP - 150

ER -