Effect of the quantum size effect on the performance of solar cells with a silicon nanouwire array embedded in SiO2

Yasuyoshi Kurokawa, Shinya Kato, Yuya Watanabe, Akira Yamada, Makoto Konagai, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

研究成果: 会議への寄与タイプポスター査読

1 被引用数 (Scopus)

抄録

The electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (E g=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

本文言語英語
ページ145-150
ページ数6
DOI
出版ステータス出版済み - 12月 28 2012
外部発表はい
イベント2012 MRS Spring Meeting - San Francisco, CA, 米国
継続期間: 4月 9 20124月 13 2012

その他

その他2012 MRS Spring Meeting
国/地域米国
CitySan Francisco, CA
Period4/9/124/13/12

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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