Effect of ultrasonic strain on p-type silicon wafers

Kazuki Tsuruta, Masaki Mito, Takuma Nagano, Yuki Katamune, Tsuyoshi Yoshitake

    研究成果: Contribution to journalArticle査読

    2 被引用数 (Scopus)

    抄録

    In this paper, we attempt material manipulation of p-type silicon wafers by using dynamic stress with high frequency (called "ultrasonic strain"). A piezoelectric device is used as the source of a time-dependent external field. We have succeeded in manipulating the electrical resistance of a semiconductor p-type silicon wafer with ultrasonic strain with a frequency of 1 MHz. The magnitude of the variation in the electrical resistance was over 2.0 ' 103O and approximately 1.0 ' 103O, corresponding to quadruple and septuple the initial values in the p-type silicon wafers [110] and [100], respectively. The response speed against ultrasonic strain was very fast and was less than 0.2 s, which could yield the basis of a new switching-device mechanism.

    本文言語英語
    論文番号07KC07
    ジャーナルJapanese journal of applied physics
    53
    7 SPEC. ISSUE
    DOI
    出版ステータス出版済み - 7 2014

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

    フィンガープリント

    「Effect of ultrasonic strain on p-type silicon wafers」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル