Effect of using high-pressure gas atmosphere with UV photocatalysis on the CMP characteristics of a 4H-SiC substrate

Tao Yin, Panpan Zhao, Toshiro Doi, Syuhei Kurokawa, Jinyun Jiang

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

The objective of this study was to realize high-efficiency and high-quality chemical mechanical polishing (CMP) of a silicon carbide (SiC) substrate. Consequently, the effect of a gas atmosphere on the CMP characteristics of a SiC substrate was investigated. The experimental results show that increasing the partial pressure of oxygen (O2) in the atmosphere to 300 kPa led to an over 2-fold increase in the material removal rates (MRRs) of the Si and carbon (C) faces compared to an open-air atmosphere. White light interference microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) were used to analyze the face morphology and surface elements after processing. Si face atoms were more difficult to oxidize than C face atoms, resulting in a low MRR of the Si face after CMP. The MRR of the Si face was improved by using an ultraviolet (UV) photocatalysis reaction in the high-pressure O2 atmosphere. Excitation of O2 molecules in the slurry into HO2• with a stronger oxidation capability promoted the chemical reaction at the solid-liquid interface. The processing mechanism was elucidated.

本文言語英語
論文番号024010
ジャーナルECS Journal of Solid State Science and Technology
10
2
DOI
出版ステータス出版済み - 2 2021

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料

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