TY - JOUR
T1 - Effect of using high-pressure gas atmosphere with UV photocatalysis on the CMP characteristics of a 4H-SiC substrate
AU - Yin, Tao
AU - Zhao, Panpan
AU - Doi, Toshiro
AU - Kurokawa, Syuhei
AU - Jiang, Jinyun
N1 - Publisher Copyright:
© 2021 The Electrochemical Society
PY - 2021/2
Y1 - 2021/2
N2 - The objective of this study was to realize high-efficiency and high-quality chemical mechanical polishing (CMP) of a silicon carbide (SiC) substrate. Consequently, the effect of a gas atmosphere on the CMP characteristics of a SiC substrate was investigated. The experimental results show that increasing the partial pressure of oxygen (O2) in the atmosphere to 300 kPa led to an over 2-fold increase in the material removal rates (MRRs) of the Si and carbon (C) faces compared to an open-air atmosphere. White light interference microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) were used to analyze the face morphology and surface elements after processing. Si face atoms were more difficult to oxidize than C face atoms, resulting in a low MRR of the Si face after CMP. The MRR of the Si face was improved by using an ultraviolet (UV) photocatalysis reaction in the high-pressure O2 atmosphere. Excitation of O2 molecules in the slurry into HO2• with a stronger oxidation capability promoted the chemical reaction at the solid-liquid interface. The processing mechanism was elucidated.
AB - The objective of this study was to realize high-efficiency and high-quality chemical mechanical polishing (CMP) of a silicon carbide (SiC) substrate. Consequently, the effect of a gas atmosphere on the CMP characteristics of a SiC substrate was investigated. The experimental results show that increasing the partial pressure of oxygen (O2) in the atmosphere to 300 kPa led to an over 2-fold increase in the material removal rates (MRRs) of the Si and carbon (C) faces compared to an open-air atmosphere. White light interference microscopy, energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS) were used to analyze the face morphology and surface elements after processing. Si face atoms were more difficult to oxidize than C face atoms, resulting in a low MRR of the Si face after CMP. The MRR of the Si face was improved by using an ultraviolet (UV) photocatalysis reaction in the high-pressure O2 atmosphere. Excitation of O2 molecules in the slurry into HO2• with a stronger oxidation capability promoted the chemical reaction at the solid-liquid interface. The processing mechanism was elucidated.
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U2 - 10.1149/2162-8777/abe7a8
DO - 10.1149/2162-8777/abe7a8
M3 - Article
AN - SCOPUS:85102596297
VL - 10
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 2
M1 - 024010
ER -