Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

A method of Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al2O3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al 2O3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 1016-1018cm-3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al2O 3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide- semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al2O3-PDA.

元の言語英語
ページ(範囲)128-133
ページ数6
ジャーナルSolid-State Electronics
60
発行部数1
DOI
出版物ステータス出版済み - 6 1 2011

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Passivation
passivity
insulators
Annealing
Defects
annealing
defects
Substrates
Personal digital assistants
Condensation
condensation
Surface analysis
Surface reactions
MOSFET devices
metal oxide semiconductors
surface reactions
field effect transistors
Oxidation
oxidation
evaluation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing. / Yang, Haigui; Iyota, Masatoshi; Ikeura, Shogo; Wang, Dong; Nakashima, Hiroshi.

:: Solid-State Electronics, 巻 60, 番号 1, 01.06.2011, p. 128-133.

研究成果: ジャーナルへの寄稿記事

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