Effective passivation of defects in Ge-rich SiGe-on-insulator substrates by Al2O3 deposition and subsequent post-annealing

Haigui Yang, Masatoshi Iyota, Shogo Ikeura, Dong Wang, Hiroshi Nakashima

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

A method of Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) was proposed to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates, which were fabricated using Ge condensation by dry oxidation. The effect of Al2O3-PDA on defect passivation was clarified by surface analysis and electrical evaluation. It was found that Al 2O3-PDA could not only suppress the surface reaction during Al-PDA in our previous work [Yang H, Wang D, Nakashima H, Hirayama K, Kojima S, Ikeura S. Defect control by Al-deposition and the subsequent post-annealing for SiGe-on-insulator substrates with different Ge fractions. Thin Solid Films 2010; 518: 2342-5.], but could also effectively passivate p-type defects generated during Ge condensation. The concentration in the range of 1016-1018cm-3 for defect-induced acceptors and holes in Ge-rich SGOI drastically decreased after Al2O 3-PDA. As a result of defect passivation, the electrical characteristics of both back-gate p-channel and n-channel metal-oxide- semiconductor field-effect transistors fabricated on Ge-rich SGOI were greatly improved after Al2O3-PDA.

本文言語英語
ページ(範囲)128-133
ページ数6
ジャーナルSolid-State Electronics
60
1
DOI
出版ステータス出版済み - 6 2011

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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