Effective thickness of CeO2 buffer layer for YBCO coated conductor by advanced TFA-MOD process

Y. Sutoh, K. Nakaoka, J. Matsuda, Y. Kitoh, T. Nakanishi, A. Nakai, M. Yoshizumi, S. Miyata, Y. Yamada, T. Izumi, Y. Shiohara, T. Saitoh

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

YBCO films were fabricated on PLD-CeO2/IBAD-Gd2Zr2O7/Hastelloy substrates using the advanced TFA-MOD process. The effective thickness of the CeO2 buffer layer for obtaining high Ic was investigated in short samples of YBCO films. The CeO2 buffer layer was epitaxially grown on an IBAD-Gd2Zr2O7 template tape with 18° of Δφ{symbol} by a reel-to-reel PLD system. The in-plane grain alignment of PLD-CeO2 buffer layers rapidly improved with the thickness and saturated at a critical thickness of 0.8 μm. The size of CeO2 grains was about 1 μm at the saturated thickness of Δφ{symbol}. YBCO films with the thickness of 1 μm were deposited by the TFA-MOD on the CeO2 buffer layer with different thickness films. Improvement of the CeO2 in-plane grain alignment resulted in increase of Ic. The Ic values of 250-290 A were obtained with the CeO2 layer thicker than 0.8 μm. The CeO2 thickness, at which the intensity ratio of the BaCeO3 was saturated, corresponded to the critical thickness. From the view points of achieving higher production rates and to obtain the CeO2 Δφ{symbol} value of 5° as well as considering the reaction between YBCO and CeO2, the optimum thickness of the CeO2 buffer layer on the IBAD-Gd2Zr2O7 with 18° of Δφ{symbol} was found to be at least 0.8 μm.

本文言語英語
ページ(範囲)571-573
ページ数3
ジャーナルPhysica C: Superconductivity and its applications
463-465
SUPPL.
DOI
出版ステータス出版済み - 10 1 2007
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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