Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers

Osamu Ohnishi, Toshiro Doi, Syuhei Kurokawa, Tsutomu Yamazaki, Michio Uneda, Tao Yin, Isamu Koshiyama, Koichiro Ichikawa, Hideo Aida

研究成果: ジャーナルへの寄稿学術誌査読

11 被引用数 (Scopus)

抄録

To establish a high-efficiency and high-quality polishing process by controlling the workpiece environment, a prototype chemical mechanical polishing (CMP) machine that can perform double-side CMP simultaneously in a sealed pressure chamber was developed. Using this new machine, polishing experiments on single crystalline silicon carbide (SiC) wafers were carried out. The results showed that applying a highly pressurized O2 gas and ultraviolet light irradiation were effective in SiC CMP.

本文言語英語
論文番号05EF05
ジャーナルJapanese journal of applied physics
51
5 PART 2
DOI
出版ステータス出版済み - 5月 1 2012

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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