Effects of crystal rotation rate on the melt-crystal interface of a CZ-Si crystal growth in a transverse magnetic field

Lijun Liu, Koichi Kakimoto

研究成果: Contribution to journalArticle査読

37 被引用数 (Scopus)

抄録

A series of computations were carried out to study the effect of crystal rotation rate on the melt-crystal interface shape and temperature gradient at the interface during CZ-Si crystal growth in a transverse magnetic field (TMCZ). A three-dimensional (3D) global model was used in this study. It was found that the interface deflection changes from non-uniformity in the azimuthal direction to an axisymmetric distribution with increasing crystal rotation rate. The mechanism of this effect is mainly attributed to the spatial fluctuations of local growth rate, which is derived as a function of crystal rotation rate and non-uniformity of interface deflection in the azimuthal direction. It contributes to the formation of the shape of the melt-crystal interface through the heat release of solidification at the melt-crystal interface. Even though the melt-crystal interface shape is nearly axisymmetric at a high crystal rotation rate, local growth rate fluctuations are still noticeable and play an important role in the characteristics of heat transfer and impurity segregation at the melt-crystal interface.

本文言語英語
ページ(範囲)306-312
ページ数7
ジャーナルJournal of Crystal Growth
310
2
DOI
出版ステータス出版済み - 1 15 2008
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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