Effects of deposition rate and ion bombardment on properties of a-C:H films deposited by H-assisted plasma CVD method

Xiao Dong, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

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In our previous study, we realized conformal, subconformal, and anisotropic deposition profiles of hydrogenated amorphous carbon (a-C:H) films formed on trench substrates by plasma CVD using toluene. To obtain information on the film structures, we investigated the effects of deposition rate and ion bombardment on hydrogen bonding configurations and hydrogen content in the a-C:H films deposited by plasma CVD using toluene. The structure of a-C:H films transforms from polymer-like a-C:H (PLCH) for the ion energy <75 eV to diamond-like a-C:H (DLCH) for the ion energy ;75 eV. The hydrogen bonding configurations in a-C:H films are closely related to the ion energy, whereas they are less dependent on ion flux and deposition rate. The mass density increases gradually with decreasing hydrogen content in the PLCH region, and it increases sharply with decreasing hydrogen content in the DLCH region. This difference is due to the different C-C sp3 concentration in PLCH and DLCH films.

元の言語英語
記事番号01AA11
ジャーナルJapanese Journal of Applied Physics
55
発行部数1
DOI
出版物ステータス出版済み - 1 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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