Effects of dose on activation characteristics of P in Ge

Mohammad Anisuzzaman, Taizoh Sadoh

研究成果: Contribution to journalArticle査読

抄録

Ion-implantation characteristics and dopant activation behavior of P in Ge have been investigated. A Monte Carlo simulation indicates a smaller projected range and consequently a smaller critical dose of amorphization for Ge compared to Si. The solid-phase epitaxial (SPE) regrowth characteristics of damaged layers for Ge clearly depend on crystal orientation of the substrate in completely amorphized samples, while no orientation dependent regrowth is observed in the partially amorphized samples. These phenomena were explained on the basis of the damage cluster model. In addition, maximum carrier activation coincides with the complete regrowth at annealing temperatures of 300-400°C in completely amorphized samples. However, higher temperature annealing (500-550°C) is necessary for maximum carrier activation in partially amorphized samples, although SPE regrowth completes around 250-300°C. Analysis of the temperature dependence of carrier activation ratio in partially amorphized samples suggests that carrier-activation should be mediated by vacancy-migration.

本文言語英語
ページ(範囲)3255-3258
ページ数4
ジャーナルThin Solid Films
520
8
DOI
出版ステータス出版済み - 2 1 2012

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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