Effects of electroless Ni/Sn bump formation using hydrogen-plasma reflow on the electrical characteristics of MOSFETs

Akihiro Ikeda, Yashuhiro Kimiya, Yoshiaki Fukunaga, Hiroshi Ogi, Reiji Hattori, Hisao Kuriyaki, Yashuhide Ohno, Yukinori Kuroki

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Fine size Ni/Sn bumps were formed by electroless Ni/Sn plating and hydrogen plasma reflow, and then electrical characteristics of nMOSFETs and pMOSFETs were evaluated on the bumped chips. After the hydrogen plasma reflow, threshold voltages and carrier mobilities were not changed from those of the nMOSFETs and pMOSFETs as fabricated, before Ni/Sn plating. Also, gate leak currents were not increased by the plasma reflow for both the nMOSFETs and pMOSFETs. Off leak currents of the nMOSFETs were slightly decreased after the plasma reflow. In contrast, off leak currents of the pMOSFETs were slightly increased up to several tens of pA after the plasma reflow. However, the changes of the off leak currents by the plasma reflow were very small for both the nMOSFETs and pMOSFETs. Electrical damages induced by the plasma reflow were negligible for both the nMOSFETs and pMOSFETs.

本文言語英語
ホスト出版物のタイトル9th Electronics Packaging Technology Conference, EPTC 2007
ページ926-930
ページ数5
DOI
出版ステータス出版済み - 2007
イベント9th Electronics Packaging Technology Conference, EPTC 2007 - , シンガポール
継続期間: 12 12 200712 12 2007

出版物シリーズ

名前Proceedings of the Electronic Packaging Technology Conference, EPTC

その他

その他9th Electronics Packaging Technology Conference, EPTC 2007
国/地域シンガポール
Period12/12/0712/12/07

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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