Effects of electron concentration on the optical absorption edge of InN

J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, Hai Lu, William J. Schaff, A. Barcz, R. Jakiela

研究成果: ジャーナルへの寄稿学術誌査読

225 被引用数 (Scopus)

抄録

The effects of free electron concentration were analyzed which ranged form 10 17 to 10 20 cm -3. The optical absorption, Hall effect and ion mass spectrometry were used for performing the investigation. The intrinsic band gap of InN of about 0.7 to 1.7 eV was observed for optical absorption edge. The Burstein-Moss shift was used to account electron concentration dependence of optical absorption edge energy. The O and H impurities were not able to fully account for free electron concentration in films which was shown by secondary ion mass spectrometry.

本文言語英語
ページ(範囲)2805-2807
ページ数3
ジャーナルApplied Physics Letters
84
15
DOI
出版ステータス出版済み - 4月 12 2004
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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