Effects of gas flow on particle growth in silane RF discharges

Yasuhiro Matsuoka, Masaharu Shiratani, Tsuyoshi Fukuzawa, Yukio Watanabe, Kyo Seon Kim

研究成果: Contribution to journalArticle査読

32 被引用数 (Scopus)

抄録

The effects of gas flow on particle growth in silane RF discharges in a plasma chemical vapor deposition (PCVD) reactor with a shower-type powered electrode are studied using an in situ two-dimensional polarization-sensitive laser-light-scattering method. Particle growth depends on both the production of short-lifetime radicals and the loss of neutral clusters in the radical production region around the plasma/sheath boundary near the powered electrode. Gas flow of a velocity above about 6 cm/s is effective in suppressing particle growth because of increase in loss of neutral clusters. Moreover, particles larger than 120 nm in size that flow to the plasma/sheath boundary near the grounded electrode are found to pass through the sheath. This implies that such particles may deposit on film surfaces for PCVD reactors with the shower-type powered electrode.

本文言語英語
ページ(範囲)4556-4560
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
7 B
DOI
出版ステータス出版済み - 7 1999

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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