Effects of gas flow rate on deposition rate and number of Si clusters incorporated into a-Si:H films

Susumu Toko, Yoshihiro Torigoe, Kimitaka Keya, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

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The suppression of cluster incorporation into a-Si:H films is the key to better film stability, because incorporated clusters contribute to the formation of SiH2 bonds and hence lead to light-induced degradation of the films. To deposit stable a-Si:H solar cells at a high deposition rate (DR), we studied the effects of the gas flow rate on DR and the number of Si clusters incorporated into a-Si:H films with discharge power as a parameter, using a multihollow discharge-plasma chemical vapor deposition method. We succeeded in depositing high-quality a-Si:H films with the incorporation of few clusters at DR of 0.1nm/s. We also found that, under a low gas flow rate and a high discharge power, high-density clusters exist in plasma and hence DR is reduced as a result of radical loss to the clusters.

元の言語英語
記事番号01AA19
ジャーナルJapanese Journal of Applied Physics
55
発行部数1
DOI
出版物ステータス出版済み - 1 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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