Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Satoru Tanaka, R. Scott Kern, Robert F. Davis

研究成果: ジャーナルへの寄稿記事

69 引用 (Scopus)

抄録

Silicon carbide thin films have been grown on vicinal 6H-SiC(0001) substrates by gas-source molecular beam epitaxy at 1050°C. The effect of gas flow ratios (C2H4Si2H6=1,2,10) on the growth mode was examined via cross-sectional high resolution transmission electron microscopy and in situ reflection high energy electron diffraction. Step flow, step bunching, and the deposition of 6H-SiC occurred at the outset of the exposure of the (1×1) surface to the reactants using any flow ratio. Subsequent deposition resulted in step flow and continued growth of 6H films or formation and coalescence of 3C-SiC islands using the gas flow ratio of one of the ethylene-rich ratios, respectively. The (3×3) surface reconstruction observed using the former ratio is believed to enhance the diffusion lengths of the adatoms which, in turn, promotes step flow growth.

元の言語英語
ページ(範囲)2851-2853
ページ数3
ジャーナルApplied Physics Letters
65
発行部数22
DOI
出版物ステータス出版済み - 12 1 1994
外部発表Yes

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silicon carbides
gas flow
molecular beam epitaxy
thin films
gases
bunching
diffusion length
high energy electrons
coalescing
adatoms
ethylene
electron diffraction
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy. / Tanaka, Satoru; Kern, R. Scott; Davis, Robert F.

:: Applied Physics Letters, 巻 65, 番号 22, 01.12.1994, p. 2851-2853.

研究成果: ジャーナルへの寄稿記事

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