Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas-source molecular beam epitaxy

Physics

• Ratios 100%
• Gas Flow 50%
• Deposition 33%
• Silicon Carbide 33%
• Molecular Beam Epitaxy 33%
• Substrates 16%
• Thin Films 16%
• Growth 16%
• Atolls 16%
• Adatoms 16%
• Ethylene 16%

Engineering

• Step Flow 50%
• Thin Film Growth 50%
• Source Gas 33%
• Growth Mode 33%
• Coalescence 16%
• Thin Films 16%
• Surfaces 16%
• Substrates 16%
• Reactant 16%
• Diffusion Length 16%
• Flow Growth 16%
• Polytypes 16%

Material Science

• Coalescence 16%
• Film 16%
• Surface 16%
• Thin Films 16%
• High-Resolution Transmission Electron Microscopy 16%
• Reflection High-Energy Electron Diffraction 16%
• Surface Reconstruction 16%