Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition

Takashi Kojima, Susumu Toko, Kazuma Tanaka, Hyunwoong Seo, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

研究成果: ジャーナルへの寄稿記事

抄録

To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

元の言語英語
記事番号1406082
ジャーナルPlasma and Fusion Research
13
DOI
出版物ステータス出版済み - 1 1 2018

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vapor deposition
gases
plasma jets
hollow
deposits
reactors
electrodes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

これを引用

Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition. / Kojima, Takashi; Toko, Susumu; Tanaka, Kazuma; Seo, Hyunwoong; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

:: Plasma and Fusion Research, 巻 13, 1406082, 01.01.2018.

研究成果: ジャーナルへの寄稿記事

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abstract = "To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.",
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T1 - Effects of gas velocity on deposition rate and amount of cluster incorporation into a-Si:H films fabricated by SiH4 plasma chemical vapor deposition

AU - Kojima, Takashi

AU - Toko, Susumu

AU - Tanaka, Kazuma

AU - Seo, Hyunwoong

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

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AB - To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18m/s, clusters are trapped between the multihollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

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