Effects of hydrogen dilution on electron density in multi-hollow discharges with magnetic field for A-Si:H film deposition

Kazunori Koga, Yuuki Kawashima, Kenta Nakahara, Takeaki Matsunaga, William Makoto Nakamura, Masaharu Shiratani

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

We have measured dependence of electron density ne on hydrogen dilution ratio R= [H2]/([SiH4]+[H2]) in the multi-hollow discharges with or without magnetic fields to obtain information about the deposition rate enhancement due to hydrogen dilution and applying the magnetic fields. The R dependence of the ne did not correlate with that of the deposition rate. The ne exponentially decreases with a distance from the discharges z. The ne decreases faster for higher R. These complicated behaviors of ne may be explained by electron attachment to the clusters generated in the SiH4+H2 discharges. For R=0, the ne was almost same value regardless with or without magnetic fields. For R=1, ne with magnetic fields was 1/10 of that without magnetic fields. We also found that, for R=0, ne drastically decreased with increasing the z, while for R=1, ne showed a gradual decrease with z. The effects of applying magnetic fields on the deposition are unclear but applying the magnetic fields may affect the electron energy distribution.

本文言語英語
ホスト出版物のタイトルProgram - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ページ3718-3721
ページ数4
DOI
出版ステータス出版済み - 12月 20 2010
イベント35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, 米国
継続期間: 6月 20 20106月 25 2010

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

その他

その他35th IEEE Photovoltaic Specialists Conference, PVSC 2010
国/地域米国
CityHonolulu, HI
Period6/20/106/25/10

!!!All Science Journal Classification (ASJC) codes

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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