Effects of hydrogen intercalation on transport properties of quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

研究成果: Contribution to journalArticle

18 引用 (Scopus)

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We report that mobility in quasi-free-standing monolayer graphene grown on SiC(0001), when compared at the same carrier density, depends on the annealing temperature used for hydrogen intercalation. This was verified by measuring mobility in top-gated devices using quasi-freestanding monolayer graphene obtained by annealing at different temperatures. The density of charged impurities varies with annealing temperature, and it influences transport properties. Our systematic investigation shows that annealing temperatures between 700 and 800 °C are optimum for obtaining high-mobility quasi-free-standing monolayer graphene with the lowest number of charged impurities.

元の言語英語
記事番号04EN01
ジャーナルJapanese Journal of Applied Physics
53
発行部数4 SPEC. ISSUE
DOI
出版物ステータス出版済み - 4 2014
外部発表Yes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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