Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes

Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang

    研究成果: Contribution to journalArticle査読

    2 被引用数 (Scopus)

    抄録

    Direct band gap electroluminescence (EL) and light detection were studied at room temperature for n-type bulk germanium (Ge) by using fin-type asymmetric lateral metal/Ge/metal diodes. HfGe/Ge and PtGe/Ge contacts were used for injecting holes. Electron cyclotron resonance plasma oxidation and physical vapor deposition bilayer passivation (BLP) methods were employed for passivating the surface of the active region. A high EL intensity and a low dark current intensity were observed for the sample with PtGe/Ge contact and BLP, owing to the small/large barrier height of holes/electrons for PtGe/Ge contact, respectively, and the low density of interface states for the active region with BLP. The local-heatinginduced redshift of the EL peak for the sample with PtGe/Ge contact is smaller than that for the sample with HfGe/Ge contact, owing to the lower parasitic resistance of PtGe/Ge contact. The diode with PtGe/Ge contact and BLP shows an on/off ratio of >104 and a responsivity of 0.70A/W, corresponding to an external quantum efficiency of 56.0% under a wavelength of 1.55 μm.

    本文言語英語
    論文番号04EH08
    ジャーナルJapanese journal of applied physics
    55
    4
    DOI
    出版ステータス出版済み - 4 2016

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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