Effects of Mg doping on growth and structures of polycrystalline GaN by remote plasma MOCVD

Takeshi Iwanaga, Shigeru Yagi, Yoshifumi Ikoma, Teruaki Motooka

    研究成果: Contribution to journalArticle査読

    5 被引用数 (Scopus)

    抄録

    Undoped and heavily Mg-doped polycrystalline GaN (poly-GaN) films grown on fused silica substrate at 310 °C are investigated by transmission electron microscopy, reflected high-energy electron diffraction and X-ray diffraction measurements. Undoped poly-GaN films were composed of nano-columns roughly with surface-normal c-axis orientations (c-orientations). Similar structures were found in 2.0 at% Mg-doped poly-GaN, while no appreciable c-orientations were observed in 5.2 at% Mg-doped films. The observed difference can be explained by a reduction in the growth anisotropy due to an increase in the growth rate along the direction perpendicular to the [0 0 0 1] of each crystallite.

    本文言語英語
    ページ(範囲)1-5
    ページ数5
    ジャーナルJournal of Crystal Growth
    274
    1-2
    DOI
    出版ステータス出版済み - 1 15 2005

    All Science Journal Classification (ASJC) codes

    • 凝縮系物理学
    • 無機化学
    • 材料化学

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