Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering

Tomoaki Ide, Koichi Matsushima, Ryota Shimizu, Daisuke Yamashita, Hynwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

研究成果: Contribution to journalConference article査読

2 被引用数 (Scopus)

抄録

Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of "nitrogen mediated crystallization (NMC) method", where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.

本文言語英語
ページ(範囲)41-46
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
1741
January
DOI
出版ステータス出版済み - 2015
イベント2014 MRS Fall Meeting - Boston, 米国
継続期間: 11 30 201412 5 2014

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル