Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

Ayhan Yurtsever, Jo Onoda, Takushi Iimori, Kohei Niki, Toshio Miyamachi, Masayuki Abe, Seigi Mizuno, Tanaka Satoru, Fumio Komori, Yoshiaki Sugimoto

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.

元の言語英語
ページ(範囲)3956-3966
ページ数11
ジャーナルSmall
DOI
出版物ステータス出版済み - 8 3 2016

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Graphite
Intercalation
Electronic properties
Graphene
Structural properties
Photoelectron Spectroscopy
Atomic Force Microscopy
Photoelectron spectroscopy
Scanning Tunnelling Microscopy
Scanning tunneling microscopy
Microscopic examination
Substrates
Magnetoelectronics
Core levels
Chemical bonds
Buffer layers
Superconductivity
Fermi level
Binding energy
Atomic force microscopy

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

これを引用

Yurtsever, A., Onoda, J., Iimori, T., Niki, K., Miyamachi, T., Abe, M., ... Sugimoto, Y. (2016). Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC. Small, 3956-3966. https://doi.org/10.1002/smll.201600666

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC. / Yurtsever, Ayhan; Onoda, Jo; Iimori, Takushi; Niki, Kohei; Miyamachi, Toshio; Abe, Masayuki; Mizuno, Seigi; Satoru, Tanaka; Komori, Fumio; Sugimoto, Yoshiaki.

:: Small, 03.08.2016, p. 3956-3966.

研究成果: ジャーナルへの寄稿記事

Yurtsever, A, Onoda, J, Iimori, T, Niki, K, Miyamachi, T, Abe, M, Mizuno, S, Satoru, T, Komori, F & Sugimoto, Y 2016, 'Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC', Small, pp. 3956-3966. https://doi.org/10.1002/smll.201600666
Yurtsever, Ayhan ; Onoda, Jo ; Iimori, Takushi ; Niki, Kohei ; Miyamachi, Toshio ; Abe, Masayuki ; Mizuno, Seigi ; Satoru, Tanaka ; Komori, Fumio ; Sugimoto, Yoshiaki. / Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC. :: Small. 2016 ; pp. 3956-3966.
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abstract = "The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moir{\'e} superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.",
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AU - Miyamachi, Toshio

AU - Abe, Masayuki

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