Effects of protium introduction on electrical and optical properties of tin-germanium oxide thin films

Makoto Arita, Hirofumi Konishi, Masataka Masuda, Yasunori Hayashi

    研究成果: Contribution to journalArticle査読

    5 被引用数 (Scopus)

    抄録

    Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.

    本文言語英語
    ページ(範囲)2670-2672
    ページ数3
    ジャーナルMaterials Transactions
    43
    11
    DOI
    出版ステータス出版済み - 11 2002

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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