Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge ≤ 1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge ≥ 4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introductions.
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