Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2Structures

Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

研究成果: Contribution to journal › Article › 査読

寄稿の翻訳タイトル	Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2Structures
本文言語	未定義
ページ（範囲）	03B004-03B004
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	48
号	3
出版ステータス	出版済み - 3 23 2009

文献へのアクセス

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title = "Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2Structures",

author = "Taizoh Sadoh and Hiroki Ohta and Masanobu Miyao",

year = "2009",

month = mar,

day = "23",

language = "未定義",

volume = "48",

pages = "03B004--03B004",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

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TY - JOUR

T1 - Effects of Si Layer Thickness on Solid-Phase Crystallization of Stacked Ge/Si/SiO2Structures

AU - Sadoh, Taizoh

AU - Ohta, Hiroki

AU - Miyao, Masanobu

PY - 2009/3/23

Y1 - 2009/3/23

M3 - Article

VL - 48

SP - 03B004-03B004

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 3

ER -