Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Taizoh Sadoh; Hiroki Ohta; Masanobu Miyao

Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures (Special issue: Active-matrix flatpanel displays and devices: TFT technologies and FPD materials)

Taizoh Sadoh, Hiroki Ohta, Masanobu Miyao

電子デバイス工学

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

本文言語	英語
ページ（範囲）	03B004-1〜3
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	48
号	3
出版ステータス	出版済み - 3月 2009

文献へのアクセス

http://id.ndl.go.jp/bib/10191531

引用スタイル

Effects of Si layer thickness on solid-phase crystallization of stacked Ge/Si/SiO2 structures (Special issue : Active-matrix flatpanel displays and devices: TFT technologies and FPD materials). / Sadoh, Taizoh; Ohta, Hiroki; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 48, No. 3, 03.2009, p. 03B004-1〜3.

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

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