Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization

Kazuya Iwasaki, Koichi Matsushima, Daisuke Yamashita, Hyunwoong Seo, Kazunori Koga, Masaharu Shiratani, Naho Itagaki

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

ZnO films were fabricated by RF magnetron sputtering with nitrogen mediated crystallization (NMC) under various gas pressures. X-ray diffraction measurements show that the NMC-ZnO films are highly crystalline regardless of the gas pressure, and the full width at half maximum values of the (0002) rocking curves range from 0.032 to 0.044°. In contrast, atomic force microscopy (AFM) reveals that the gas pressure plays an important role in determining the surface morphology of the films. The root-mean-square (RMS) roughness decreases monotonically from 1.05 to 0.60 nm with increasing pressure from 0.2 to 0.7 Pa. However, the RMS roughness increases with further increases in the pressure, reaching 2.15 nm at 2.1 Pa. The height distribution of the NMC-ZnO films derived from the AFM images is narrowest at 0.7 Pa, indicating that the smooth surface obtained at 0.7 Pa can be attributed to spatially uniform nucleation occurring in a short time period. These results indicate that the sputtering gas pressure is a key parameter for controlling the surface morphology of NMC-ZnO films.

元の言語英語
ページ(範囲)265-270
ページ数6
ジャーナルMRS Advances
2
発行部数5
DOI
出版物ステータス出版済み - 1 1 2017

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Crystallization
pressure dependence
gas pressure
Surface morphology
Sputtering
Nitrogen
Gases
sputtering
crystallization
nitrogen
roughness
atomic force microscopy
Atomic force microscopy
Surface roughness
Full width at half maximum
magnetron sputtering
Magnetron sputtering
nucleation
Nucleation
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

これを引用

Effects of sputtering gas pressure dependence of surface morphology of ZnO films fabricated via nitrogen mediated crystallization. / Iwasaki, Kazuya; Matsushima, Koichi; Yamashita, Daisuke; Seo, Hyunwoong; Koga, Kazunori; Shiratani, Masaharu; Itagaki, Naho.

:: MRS Advances, 巻 2, 番号 5, 01.01.2017, p. 265-270.

研究成果: ジャーナルへの寄稿記事

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AU - Iwasaki, Kazuya

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AU - Yamashita, Daisuke

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AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Itagaki, Naho

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N2 - ZnO films were fabricated by RF magnetron sputtering with nitrogen mediated crystallization (NMC) under various gas pressures. X-ray diffraction measurements show that the NMC-ZnO films are highly crystalline regardless of the gas pressure, and the full width at half maximum values of the (0002) rocking curves range from 0.032 to 0.044°. In contrast, atomic force microscopy (AFM) reveals that the gas pressure plays an important role in determining the surface morphology of the films. The root-mean-square (RMS) roughness decreases monotonically from 1.05 to 0.60 nm with increasing pressure from 0.2 to 0.7 Pa. However, the RMS roughness increases with further increases in the pressure, reaching 2.15 nm at 2.1 Pa. The height distribution of the NMC-ZnO films derived from the AFM images is narrowest at 0.7 Pa, indicating that the smooth surface obtained at 0.7 Pa can be attributed to spatially uniform nucleation occurring in a short time period. These results indicate that the sputtering gas pressure is a key parameter for controlling the surface morphology of NMC-ZnO films.

AB - ZnO films were fabricated by RF magnetron sputtering with nitrogen mediated crystallization (NMC) under various gas pressures. X-ray diffraction measurements show that the NMC-ZnO films are highly crystalline regardless of the gas pressure, and the full width at half maximum values of the (0002) rocking curves range from 0.032 to 0.044°. In contrast, atomic force microscopy (AFM) reveals that the gas pressure plays an important role in determining the surface morphology of the films. The root-mean-square (RMS) roughness decreases monotonically from 1.05 to 0.60 nm with increasing pressure from 0.2 to 0.7 Pa. However, the RMS roughness increases with further increases in the pressure, reaching 2.15 nm at 2.1 Pa. The height distribution of the NMC-ZnO films derived from the AFM images is narrowest at 0.7 Pa, indicating that the smooth surface obtained at 0.7 Pa can be attributed to spatially uniform nucleation occurring in a short time period. These results indicate that the sputtering gas pressure is a key parameter for controlling the surface morphology of NMC-ZnO films.

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