Electric field assisted low-temperature growth of SiGe on insulating films for future TFT

Masanobu Miyao, Hiroshi Kanno, Taizoh Sadoh

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

2 被引用数 (Scopus)

抄録

Development of new semiconductors with high mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating electric field assisted metal-induced lateral crystallization (MILC) of a-Si1-XGeX (0<X<1) on insulating substrates. This realizes uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors (TFTs) with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of electric field assisted low temperature SiGe growth and discusses the possible application to TFTs with high speed operation.

本文言語英語
ホスト出版物のタイトルSixth International Conference on Thin Film Physics and Applications
6984
DOI
出版ステータス出版済み - 4月 21 2008
イベント6th International Conference on Thin Film Physics and Applications, TFPA 2007 - Shanghai, 中国
継続期間: 9月 25 20079月 28 2007

その他

その他6th International Conference on Thin Film Physics and Applications, TFPA 2007
国/地域中国
CityShanghai
Period9/25/079/28/07

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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