Electric-field-assisted metal-induced lateral crystallization of amorphous SiGe on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿学術誌査読

14 被引用数 (Scopus)

抄録

The low-temperature (<550°C) metal-induced lateral crystallization of amorphous Si1-xGex. (x: 0-1) on SiO2 has been investigated under a wide range of electric fields (0-4000 V/cm). The increase in the lateral growth velocity with electric field was observed on the cathode side. However, when electric field exceeded a certain value, lateral growth velocity decreased. With increasing Ge fraction, critical field at which lateral growth velocity showed maximum decreased, and the maximum growth velocity increased. In addition, the directional growth of needlelike crystals aligned to the electric field was observed under an extremely high electric field (>2000 V/cm). These new findings will be a powerful tool for achieving new poly-SiGe with highly controlled crystal structures.

本文言語英語
ページ(範囲)4351-4354
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
5 B
DOI
出版ステータス出版済み - 5月 25 2006

!!!All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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