Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: ジャーナルへの寄稿記事

抄録

Ni-mediated lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (< 100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼ 50 μm) during low-temperature annealing (525 °C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (> 2000 V/cm), directional growth aligned to the electric field was observed. These new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

元の言語英語
ページ(範囲)40-43
ページ数4
ジャーナルThin Solid Films
508
発行部数1-2
DOI
出版物ステータス出版済み - 6 5 2006

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Crystallization
Electric fields
crystallization
electric fields
Polysilicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

:: Thin Solid Films, 巻 508, 番号 1-2, 05.06.2006, p. 40-43.

研究成果: ジャーナルへの寄稿記事

Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Miyao, Masanobu. / Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2. :: Thin Solid Films. 2006 ; 巻 508, 番号 1-2. pp. 40-43.
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