Electric field-dependent Ni-mediated lateral crystallization of a-Si on SiO2

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

抄録

Ni-mediated lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (< 100 V/cm), lateral growth velocity at the cathode side was enhanced by applying an electric field. This achieved formation of poly-Si with a large area (∼ 50 μm) during low-temperature annealing (525 °C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increasing the electric field strength. Under the extremely high electric field (> 2000 V/cm), directional growth aligned to the electric field was observed. These new findings will be a powerful tool to achieve new poly-Si with highly controlled structures.

本文言語英語
ページ(範囲)40-43
ページ数4
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータス出版済み - 6 5 2006

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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