Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    研究成果: ジャーナルへの寄稿記事

    22 引用 (Scopus)

    抄録

    Impurity levels in Ag-doped p-GaSe have been studied by using photoluminescence and Hall effect measurements. The PL spectra at 77 K are dominated by two new emission bands at 2.02 and 1.74 eV, From the combined results of Hall effect and PL measurements, it is found that the 2.02 and 1.74 eV emission bands are associated with the same acceptor level at 0.07 eV above the valence band, moreover, the 2.02 and 1.74 eV emission bands are caused by conduction band-acceptor and donor-acceptor transitions, respectively.

    元の言語英語
    ページ(範囲)159-164
    ページ数6
    ジャーナルPhysica Status Solidi (A) Applied Research
    160
    発行部数1
    DOI
    出版物ステータス出版済み - 1 1 1997

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    Hall effect
    Semiconductor materials
    Electron transitions
    Valence bands
    Conduction bands
    Photoluminescence
    Impurities
    conduction bands
    valence
    photoluminescence
    impurities
    gallium selenide

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    これを引用

    Electrical and optical characteristics of the layer semiconductor P-Gase doped with Ag. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    :: Physica Status Solidi (A) Applied Research, 巻 160, 番号 1, 01.01.1997, p. 159-164.

    研究成果: ジャーナルへの寄稿記事

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