Electrical and photovoltaic properties of n-type nanocrystalline-FeSi 2/p-type Si heterojunctions prepared by facing-targets direct-current sputtering at room temperature

Mahmoud Shaban, Haruhiko Kondo, Kazuhiro Nakashima, Tsuyoshi Yoshitake

    研究成果: Contribution to journalArticle査読

    30 被引用数 (Scopus)

    抄録

    Semiconducting nanocrystalline iron disilicide (NC-FeSi2) thin films were deposited on Si(111) substrates by facing-targets direct-current sputtering at room temperature. The electrical and photovoltaic properties of the n-type NC-FeSi2/p-type Si heterojunctions were measured and investigated. We experimentally proved the possibility of employing this combination in photovoltaics. A large leakage current observed in the current-voltage characteristics, which was predominantly due to the heterojunction interface defects, resulted in a low conversion efficiency.

    本文言語英語
    ページ(範囲)5420-5422
    ページ数3
    ジャーナルJapanese journal of applied physics
    47
    7 PART 1
    DOI
    出版ステータス出版済み - 7 11 2008

    All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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