Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2

Xu Guang Zheng, Hisao Kuriyaki, Kazuyoshi Hirakawa

研究成果: Contribution to journalArticle査読

18 被引用数 (Scopus)

抄録

The electrical resistivity and the Hall coefficient of the layered compound ZrSe2 and HfSe2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hall mobility exhibits a temperature dependence of the form μ∞: T-16 in ZrSe2 as well as in HfSe2 It is well explained in terms of homo-polar-mode optical scattering.

本文言語英語
ページ(範囲)622-626
ページ数5
ジャーナルjournal of the physical society of japan
58
2
DOI
出版ステータス出版済み - 1989

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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