Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2

Xu Guang Zheng, Hisao Kuriyaki, Kazuyoshi Hirakawa

研究成果: ジャーナルへの寄稿記事

15 引用 (Scopus)

抄録

The electrical resistivity and the Hall coefficient of the layered compound ZrSe2 and HfSe2 grown by iodine vapour transport method have been measured. High anisotropy in electrical resistivities has been found for these compounds. The Hall mobility exhibits a temperature dependence of the form μ∞: T-16 in ZrSe2 as well as in HfSe2 It is well explained in terms of homo-polar-mode optical scattering.

元の言語英語
ページ(範囲)622-626
ページ数5
ジャーナルjournal of the physical society of japan
58
発行部数2
DOI
出版物ステータス出版済み - 1 1 1989

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anisotropy
electrical resistivity
iodine
Hall effect
vapors
temperature dependence
scattering

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2 . / Zheng, Xu Guang; Kuriyaki, Hisao; Hirakawa, Kazuyoshi.

:: journal of the physical society of japan, 巻 58, 番号 2, 01.01.1989, p. 622-626.

研究成果: ジャーナルへの寄稿記事

Zheng, Xu Guang ; Kuriyaki, Hisao ; Hirakawa, Kazuyoshi. / Electrical Anisotropy of Layered Compound ZrSe2 and HfSe2 :: journal of the physical society of japan. 1989 ; 巻 58, 番号 2. pp. 622-626.
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