Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi; T. Ikari; H. Nakashima

doi:10.1063/1.352765

Electrical characteristics of layer semiconductor p-GaSe doped with Cd

S. Shigetomi, T. Ikari, H. Nakashima

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

17 被引用数 (Scopus)

抄録

The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

本文言語	英語
ページ（範囲）	4686-4688
ページ数	3
ジャーナル	Journal of Applied Physics
巻	73
号	9
DOI	https://doi.org/10.1063/1.352765
出版ステータス	出版済み - 1993

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

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@article{4405e826ad09412f9ba585d710a9ca1a,

title = "Electrical characteristics of layer semiconductor p-GaSe doped with Cd",

abstract = "The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.",

author = "S. Shigetomi and T. Ikari and H. Nakashima",

year = "1993",

doi = "10.1063/1.352765",

language = "English",

volume = "73",

pages = "4686--4688",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Electrical characteristics of layer semiconductor p-GaSe doped with Cd

AU - Shigetomi, S.

AU - Ikari, T.

AU - Nakashima, H.

PY - 1993

Y1 - 1993

N2 - The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

AB - The electrical properties of Cd-doped GaSe have been investigated by using Hall-effect and deep-level transient spectroscopy (DLTS). The temperature dependence of hole concentration shows the characteristic of a partially compensated p-type semiconductor. The moderately deep acceptor level at about 0.28 eV above the valence band is detected by using both Hall-effect and DLTS measurements. We find that the acceptor level is associated with Cd-related defects formed by the dopant atoms.

UR - http://www.scopus.com/inward/record.url?scp=0001044011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001044011&partnerID=8YFLogxK

U2 - 10.1063/1.352765

DO - 10.1063/1.352765

M3 - Article

AN - SCOPUS:0001044011

SN - 0021-8979

VL - 73

SP - 4686

EP - 4688

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

Electrical characteristics of layer semiconductor p-GaSe doped with Cd

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!!!All Science Journal Classification (ASJC) codes

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