Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures

M. O. Aboelfotoh, R. S. Kern, S. Tanaka, R. F. Davis, C. I. Harris

研究成果: ジャーナルへの寄稿記事

47 引用 (Scopus)

抄録

Metal/AlN/n-type 6H-SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H-SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H-SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H-SiC surface. The interface is found to have a low density of trapped charges of 1 × 1011 cm-2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H-SiC(0001), and indicates the formation of a high quality interface.

元の言語英語
ページ(範囲)2873-2875
ページ数3
ジャーナルApplied Physics Letters
69
発行部数19
DOI
出版物ステータス出版済み - 11 4 1996
外部発表Yes

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metals
wurtzite
molecular beam epitaxy
transmission electron microscopy
oxides
high resolution
defects
room temperature
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures. / Aboelfotoh, M. O.; Kern, R. S.; Tanaka, S.; Davis, R. F.; Harris, C. I.

:: Applied Physics Letters, 巻 69, 番号 19, 04.11.1996, p. 2873-2875.

研究成果: ジャーナルへの寄稿記事

Aboelfotoh, MO, Kern, RS, Tanaka, S, Davis, RF & Harris, CI 1996, 'Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures', Applied Physics Letters, 巻. 69, 番号 19, pp. 2873-2875. https://doi.org/10.1063/1.117347
Aboelfotoh, M. O. ; Kern, R. S. ; Tanaka, S. ; Davis, R. F. ; Harris, C. I. / Electrical characteristics of metal/AlN/n-type 6H-SiC(0001) heterostructures. :: Applied Physics Letters. 1996 ; 巻 69, 番号 19. pp. 2873-2875.
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AU - Harris, C. I.

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